| PART |
Description |
Maker |
| K6R1004C1A K6R1004C1A-12 K6R1004C1A-15 K6R1004C1A- |
256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B- |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6E1004C1B K6E1004C1B-C15 K6E1004C1B-C20 K6E1004C1 |
256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641001B-20 KM641001BL-15 KM641001BL-20 KM641001B |
256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5V OPERATING), EVOLUTIONARY PIN OUT
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641003B KM641003B-12 KM641003B-10 KM641003B-8 |
256KX4 BIT (WITH OE) HIGH SPEED STATIC RAM(5.0V OPERATING), REVOLUTIONARY PIN OUT
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV5128 IS61LV5128-10T IS61LV5128-12TI IS61LV51 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT7140LA25L48GB IDT7130LA25L48GB IDT7140SA25L48GB |
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 25 ns, PDIP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 35 ns, PDIP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 100 ns, QCC48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 55 ns, QCC48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 100 ns, CDIP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 100 ns, CQFP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 25 ns, CDIP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 55 ns, CQFP48
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 100 ns, PQCC52
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 35 ns, PQFP64
HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM 1K X 8 DUAL-PORT SRAM, 25 ns, QCC48
|
Integrated Device Technology, Inc.
|
| W26010A W26010AJ-15 W26010AJ-151 W26010AJ-20 W2601 |
64K 16 HIGH-SPEED CMOS STATIC RAM 64K6 HIGH-SPEED的CMOS静态RAM
64K 16 HIGH-SPEED CMOS STATIC RAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
HIGH SPEED SRAM
|
Winbond Electronics, Corp.
WINBOND[Winbond]
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
